Patent · US Active

Low halide lanthanum precursors for vapor deposition

US11753420B2 · kind B2 · utility

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3References
13Claims
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Key dates

Filing dateAug 4, 2021
Grant dateSep 12, 2023
Priority date—
Expiry dateAug 4, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02192
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

Lanthanide compounds for vapor deposition having ≤50.0 ppm, ≤30.0 ppm, or ≤10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.