Patent · US Active

Manufacturing method of material of light emitting layer

US11753586B2 · kind B2 · utility

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2Claims
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Key dates

Filing dateJul 26, 2022
Grant dateSep 12, 2023
Priority date
Expiry dateJul 26, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K71/311
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.