Method of manufacturing a sensor element for a potentiometric sensor
US11753710B2 · kind B2 · utility
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2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 18, 2020 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Oct 25, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/36
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to a method of manufacturing an ion-selective sensor element for a potentiometric sensor, the sensor element having a sensor element body and at least one glass layer arranged on the sensor element body, the method comprising applying the at least one glass layer to the sensor element body by means of a thermal spraying method, in which a powder of glass particles is sprayed onto the sensor element body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.