Charge detection sensor and potential measurement system
US11754610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2018 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Apr 21, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4145
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.