Method for creating cavities in silicon carbide and other semiconductor substrates
US11756783B1 · kind B1 · utility
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24Claims
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Key dates
| Filing date | Jun 11, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Nov 20, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for creating at least one cavity in a semiconductor substrate including the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.