Hybrid bonding structure and hybrid bonding method
US11756922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Mar 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of this application disclose a hybrid bonding structure and a hybrid bonding method. The hybrid bonding structure includes a first chip and a second chip. A surface of the first chip includes a first insulation dielectric and a first metal, and a first gap area exists between the first metal and the first insulation dielectric. A surface of the second chip includes a second insulation dielectric and a second metal. A surface of the first metal is higher than a surface of the first insulation dielectric. Metallic bonding is formed after the first metal is in contact with the second metal, and the first metal is longitudinally and transversely deformed in the first gap area. Insulation dielectric bonding is formed after the first insulation dielectric is in contact with the second insulation dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.