Silicon nano light emitting diodes
US11756983B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Dec 10, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Dec 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm−2, exceeding the performance of even high brightness gallium nitride LEDs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.