High electron mobility transistor and method of manufacturing the same
US11757029B2 · kind B2 · utility
1Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Apr 13, 2022 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Apr 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Provided are a high electron mobility transistor and a method of manufacturing the high electron mobility transistor. The high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode configured to form an ohmic contact with the depletion forming layer, and a second gate electrode configured to form a Schottky contact with the depletion forming layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.