Short-wave infrared focal plane arrays, and methods for utilization and manufacturing thereof
US11757060B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 16, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Aug 16, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Short-wave infrared (SWIR) focal plane arrays (FPAs) comprising a Si layer through which light detectable by the FPA reaches photodiodes of the FPA, at least one germanium (Ge) layer including a plurality of distinct photosensitive areas including at least one photosensitive area in each of a plurality of photosensitive photosites, each of the distinct photosensitive areas comprising a plurality of proximate steep structures of Ge having height of at least 0.5 μm and a height-to-width ratio of at least 2, and methods for forming same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.