Semiconductor element drive device and power conversion apparatus
US11757444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2020 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Dec 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor element drive device is provided to solve a problem that because a case of a change in the temperature of the semiconductor element or a current flowing through the semiconductor element is not take into consideration, switching loss and noise cannot be reduced sufficiently. In accordance with input sensing information (temperature T, current I), a timing control unit 3 outputs a delay signal Q to control timing of driving a current increasing circuit 5 so that a reduction of switching loss of an IGBT 101 is maximized. When the IGBT 101 is in turn-on mode or turn-off mode, the current increasing circuit 5 outputs a drive signal in response to the delay signal Q delayed by a given time from output of the drive instruction signal P. In this way, the current increasing circuit 5 increases the current that causes the gate capacitor of the IGBT 101 to be charged/discharged in response to the delay signal Q, thereby increasing a switching speed to reduce switching loss.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.