Sintered body, substrate, circuit board, and manufacturing method of sintered boy
US11758651B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Dec 14, 2022 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Dec 14, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2237/704
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value εA of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value εB of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |εA−εB|≤0.1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.