Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, optical sensor, and method for manufacturing thermoelectric conversion material
US11758813B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 26, 2019 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Jun 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/857
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.