Method of forming a piezo-electric transducing device

US11758816B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Gwenael Le Rhun · Grenoble, FR

Key dates

• Filing date: Jun 19, 2019
• Grant date: Sep 12, 2023
• Expiry date: Feb 7, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/8554

Abstract

A method for producing a piezoelectric transducer device is provided, including a membrane including at least one silicon and/or silicon nitride layer; a piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure and arranged on the membrane; first and second electrodes electrically in contact with the piezoelectric layer; and in which the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer, or in which the piezoelectric layer is in contact with the silicon and/or silicon nitride layer solely through one or more metal layers.