Transparent piezoelectric single crystal preparation method
US11758818B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 15, 2019 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Jan 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/877
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A method of preparing a piezoelectric single crystal with high piezoelectricity and near- perfect transparency. The method includes depositing electrodes on two opposition surfaces of a piezoelectric single crystal which is a ferroelectric crystal; AC-poling the piezoelectric single crystal through the electrodes by repeatedly changing polarity of an AC electric field; and after polarization, removing the electrodes on the two opposition surfaces of the piezoelectric single crystal and then depositing Ag nanowire or indium tin oxide (ITO) as electrodes on the two opposition surfaces of the piezoelectric single crystal. Repeatedly changing the polarity of the polarized electric field can increase the domain size of the ferroelectric crystal, or reduce the domain wall density of the domain structure, thereby improving the transparency of the piezoelectric single crystal having high piezoelectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.