Integrated device and neuromorphic device
US11758826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Apr 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to an embodiment, there is provided an integrated device including: a substrate; and a laminated structure stacked on the substrate, in which the laminated structure includes a first element group and a second element group disposed at a position farther from the substrate than the first element group, each of the first element group and the second element group includes a plurality of domain wall movement elements, each of the plurality of domain wall movement elements includes a domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the domain wall movement layer and the ferromagnetic layer, and each of the domain wall movement elements belonging to the second element group has a lower critical current density required for moving a domain wall of the domain wall movement layer than each of the domain wall movement elements belonging to the first element group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.