Method for manufacturing suspended graphene support film by selectively etching growth substrate
US11760641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2019 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Oct 19, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing suspended graphene support film by selectively etching growth substrate is disclosed in present invention. The transfer process of graphene is avoided. The process of present invention is efficient and low in cost, suspended graphene support film can be prepared in a single etching step. The prepared graphene support film does not need any support by polymer film and polymer fiber. The prepared graphene support film has controllable number of layers and high intactness (90%-97%), large suspended area (diameter is 10-50 μm), wide clean area (>100 nm) and can be mass-produced. In addition, the graphene support film can be directly used as transmission electron microscope support film, and can be used to achieve high resolution imaging of nanoparticles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.