Semiconductor memory devices
US11762736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2022 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Mar 19, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/1048
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a memory cell array, a link error correction code (ECC) engine and on-die ECC engine. The memory cell array includes a plurality of volatile memory cells. The link ECC engine provides a main data by performing a first ECC decoding on a first codeword including the main data and a first parity data, and generates a first error flag based on a result of the first ECC decoding. The on-die ECC engine generates a second parity data by performing a first ECC encoding on the main data, provides a target page of the memory cell array with a second codeword including the main data and the second parity data in response to the first error flag being deactivated or generates a third codeword by changing at least one of bits of the second codeword in response to the first error flag being deactivated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.