Methods of forming SOI substrates
US11764054B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Nov 15, 2020 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.