Interconnect structure and manufacturing method for the same
US11764153B1 · kind B1 · utility
0Cited by
3References
25Claims
0Family size
Inventor
Key dates
| Filing date | Jul 28, 2022 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Sep 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The interconnect structure includes a first metal line, a first interlayer dielectric (ILD) layer over the first metal line, a first conductive feature over the first metal line, wherein at least a portion of the first conductive feature is laterally surrounded by the first ILD layer, and a sidewall of the first conductive feature has a corrugated profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.