P-ohmic contact structure and light emitting device using the same
US11764333B2 · kind B2 · utility
0Cited by
0References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2020 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jul 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting diode includes an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.