Semiconductor laser device
US11764546B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 14, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.