Magnetoelectric majority gate device
US11764786B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | May 29, 2022 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | May 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A magneto-electric (ME) majority gate device includes a conducting device and a plurality of ME transistors coupled to the conducting device. In one implementation, the plurality of ME transistors include a ME AND gate device with downward interface polarization, a ME-transmission gate device with downward interface polarization, and a ME-XNOR gate device. In another implementation, the plurality of ME transistors is five single-input ME-FETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.