High-linearity radio frequency (RF) switches and amplifiers
US11764824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Nov 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B17/14
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.