Memory device and method of manufacturing memory device
US11765916B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jul 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8265
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes: a first interconnect; a second interconnect; a first string and a second string whose first ends are coupled to the first interconnect; a third string and a fourth string whose second ends are coupled to the second interconnect; a third interconnect; and driver. The third interconnect is coupled to second ends of the first and second strings and to first ends of the third and fourth strings. Each of the first, second, third, and fourth strings includes a first switch element and a memory cell coupled in series. The memory cell includes a second switch element and a resistance change element coupled in parallel. The third interconnect is coupled to the driver via the first interconnect or the second interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.