Display apparatus
US11765935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2020 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jun 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/3026
Abstract
A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.