Phase change memory device based on nano current channel

US11765987B2 · kind B2 · utility

Assignee

• Huazhong University of Science and Technology · CN

Inventors

• Xiaomin Cheng · 红钢城街道, CN
• Han Li · Beijing, CN
• Yuntao Zeng · Hubei, CN
• Yunlai Zhu · Hubei, CN
• Xiangjun Liu · Hubei, CN
• Xiangshui Miao · Hubei, CN

Key dates

• Filing date: Jan 5, 2021
• Grant date: Sep 19, 2023
• Expiry date: Jan 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory device based on a nano current channel is provided. A nano current channel layer structure is adopted and configured to limit the current channel. As such, when flowing through the layer, the current enters the phase change layer from nano crystal grains with high electrical conductivity, and the current is thereby confined in the nano current channels. By using the nano-scale conductive channels, the contact area between the phase change layer and the electrode layer is significantly decreased, the current density at local contact channel is significantly increased, and heat generation efficiency of the current in the phase change layer is improved. Moreover, an electrically insulating and heat-insulating material with low electrical conductivity and low thermal conductivity prevents heat in the phase change layer from being dissipated to the electrode layer, and Joule heat utilization efficiency of the phase change layer is thereby improved.