Patent · US Active

Semiconductor structure including scribe line structures and method for fabricating the same

US11767219B2 · kind B2 · utility

1Cited by
0References
20Claims
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Key dates

Filing dateJul 17, 2020
Grant dateSep 26, 2023
Priority date
Expiry dateNov 4, 2041

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0785
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.