Patent · US Active

Sputter target and method for producing a sputter target

US11767587B2 · kind B2 · utility

0Cited by

2References

14Claims

0Family size

Assignee

PLANSEE COMPOSITE MATERIALS GMBH · DE

Inventors

Peter Polcik · Reutte, AT
Szilard Kolozsvari · Lechbruck am See, DE
Paul Heinz Mayrhofer · Neckenmarkt, AT
Helmut Riedl · Weitra, AT

Key dates

Filing date	Feb 19, 2018
Grant date	Sep 26, 2023
Priority date	—
Expiry date	Aug 15, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC22C32/0073
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

A target for use in a physical vapor deposition process includes a matrix composed of a composite material selected from the group consisting of aluminum-based material, titanium-based material and chromium-based material and all combinations thereof. The matrix is doped with doping elements and the doping elements are embedded as constituents of ceramic compounds or aluminum alloys in the matrix. The doping elements are selected from the group of the lanthanides: La, Ce, Nb, Sm and Eu. A process for producing such a target and a use of such a target in a physical vapor deposition process are also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.