Carrier depletion-based silicon photonic modulator using capacitive coupling
US11768391B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2022 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Apr 9, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A carrier depletion-based Silicon Photonic (SiP) modulator using capacitive coupling includes a high-k dielectric material in or on slabs, between a rib. A capacitance (Ck) of the high-k dielectric material is larger than a capacitance (Cpn) of the rib, thereby reducing the high frequency impedance and improving bandwidth of the modulator. A modulator includes a first electrode; a first slab connected to the first electrode at a first end; a rib connected to the first slab at a second end of the first slab; a second slab connected to the rib at a first end; a second electrode connected to the second slab at a second end of the second slab; and a high-k dielectric material disposed in or on a portion of each of the first slab and the second slab, thereby enabling capacitive coupling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.