Thin-film transistor (TFT) architecture for liquid crystal displays
US11768408B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jul 20, 2018 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Mar 17, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13629
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device having a stack of layers defining source and pixel conductors at a first level, gate and common conductors at a second level, semiconductor channels between the source and pixel conductors and gate dielectric capacitively coupling the semiconductor channels to the gate conductors. The pixel and common conductors are configured such that, in use, a change in potential difference between the pixel and common conductors in a pixel region induces a change in one or more optical properties of a liquid crystal material in the pixel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.