Patent · US Active

Semiconductor device and method for manufacturing the same

US11769744B2 · kind B2 · utility

0Cited by
1References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 7, 2021
Grant dateSep 26, 2023
Priority date
Expiry dateDec 19, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06593
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first substrate having a first surface, and a second substrate having a second surface in contact with the first surface. The first substrate includes a first circuit, a first electrode having a first connection end on the first surface, and a first auxiliary electrode having a second connection end on the first surface. The first electrode is connected to the first circuit inside the first substrate, and the first auxiliary electrode is connected to the first electrode. The second substrate includes a second circuit and a second electrode having a third connection end on the second surface. The second electrode is connected to the second circuit. The third connection end is connected directly with the first connection end and the second connection end. The second electrode is connected directly with the first electrode and through the first auxiliary electrode to the first electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.