Semiconductor device and method of manufacturing the same
US11769747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Jun 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor device includes a first insulator. The device further includes a first pad provided in the first insulator, and including first and second layers provided on lateral and lower faces of the first insulator in order. The device further includes a second insulator provided on the first insulator. The device further includes a second pad provided on the first pad in the second insulator, and including third and fourth layers provided on lateral and upper faces of the second insulator in order. The device further includes a first portion provided between an upper face of the first pad and a lower face of the second insulator or between a lower face of the second pad and an upper face of the first insulator, and including a metal element same as a metal element included in the first layer or the third layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.