Solid-state imaging element and imaging apparatus
US11769782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2019 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Oct 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging element including a photoelectric conversion layer of a first electrical conductivity type including a plurality of pixel regions, an electrode electrically coupled to the photoelectric conversion layer and provided for each of the pixel regions, a semiconductor layer provided between the electrode and the photoelectric conversion layer and having a bandgap larger than a bandgap of the photoelectric conversion layer, a diffusion part disposed in a vicinity of an edge of the pixel region and including an impurity of a second electrical conductivity type that is diffused from the semiconductor layer across the photoelectric conversion layer, and a non-diffusion part provided inside the diffusion part and not including the impurity of the second electrical conductivity type in the photoelectric conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.