Photovoltaic device including a p-n junction and method of manufacturing

US11769844B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Dan Damjanovic · Perrysburg, US
• Feng Liao · Perrysburg, US
• Rick C. Powell · Ann Arbor, US
• Rui Shao · Dublin, US
• Jigish Trivedi · Boise, US
• Zhibo Zhao · Ann Arbor, US

Key dates

• Filing date: Oct 19, 2021
• Grant date: Sep 26, 2023
• Expiry date: Oct 19, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.