Mid-infrared light emitting diode with graphene and black phosphorous layers and manufacturing method thereof, silicon photonic circuit including the mid-infrared light emitting diode and manufacturing method thereof
US11769859B2 · kind B2 · utility
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Key dates
| Filing date | Dec 22, 2020 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Oct 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0363
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mid-infrared light emitting diode is provided, including a graphene lower electrode layer, a black phosphorous layer, and a graphene upper electrode layer sequentially arranged along a thickness direction of the mid-infrared light emitting diode, in which the black phosphorous layer contacts the graphene lower electrode layer and the graphene upper electrode layer. A manufacturing method of the mid-infrared light emitting diode, a silicon photonic circuit and a manufacturing method thereof are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.