Light-emitting diode packaging structure and method for fabricating the same
US11769861B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Feb 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.