Elastic wave device
US11770111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2018 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | May 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/025
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. An absolute value of a thermal expansion coefficient of the piezoelectric substrate is larger than an absolute value of a thermal expansion coefficient of the supporting substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the first acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the third acoustic impedance layer and the fourth acoustic impedance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.