Readout architecture for indirect time-of-flight sensing
US11770633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Nov 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A time-of-flight sensor includes a pixel array of pixel circuits. A first subset of the pixel circuits is illuminated by reflected modulated light from a portion of an object. A second subset of the pixel circuits is non-illuminated by the reflected modulated light. Each pixel circuit includes a floating diffusion that stores a portion of charge photogenerated in a photodiode in response to the reflected modulated light. A transfer transistor transfers the portion of charge from the photodiode to the floating diffusion in response to modulation by a phase modulation signal. A modulation driver block generates the phase modulation signal and is coupled to a light source that emits the modulated light to the portion of the object. The modulation driver block synchronizes scanning the modulated light emitted by the light source across the object with scanning of the first subset of the pixel circuits across the pixel array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.