Methods for low-temperature p-CVD and thermal ALD of magnesium diboride

US11773488B2 · kind B2 · utility

Assignee

• UCHICAGO ARGONNE, LLC · US

Inventors

• David Joseph MANDIA · Chicago, US
• Angel Yanguas-Gil · Northbrook, US
• Devika Choudhury · Naperville, US
• Aliraeza Nassiri · Woodridge, US
• Anil U. Mane · Naperville, US
• Jeffrey W. Elam · Elmhurst, US

Key dates

• Filing date: May 30, 2019
• Grant date: Oct 3, 2023
• Expiry date: Aug 2, 2041

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/56
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.