Patent · US Active

Storage device including nonvolatile memory device and method of operating the same

US11775203B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 15, 2021
Grant dateOct 3, 2023
Priority date
Expiry dateSep 24, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06N3/045
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.