Fusion memory

US11776607B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Hangbing Lv · Beijing, CN
• Qing Luo · Beijing, CN
• Xiaoxin Xu · Beijing, CN
• Tiancheng Gong · Beijing, CN
• Ming Liu · Beijing, CN

Key dates

• Filing date: Jan 28, 2019
• Grant date: Oct 3, 2023
• Expiry date: Jul 24, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G06N3/08
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides a fusion memory including a plurality of memory cells, wherein each memory cell of the plurality of memory cells includes: a bulk substrate; a source and a drain on the bulk substrate; a channel extending between the source and the drain; a ferroelectric layer on the channel; and a gate on the ferroelectric layer.