Method for finding optimum read voltage and flash memory system
US11776635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Apr 14, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for finding an optimum read voltage includes acquiring difference values between state bit counts of different positions. A direction for finding the optimum read voltage is determined based on the difference values. An offset for finding the optimum read voltage is determined based on correspondence between a difference value of bit count and offset. Reading is performed with the offset applied to a current read reference voltage, wherein upon read-success, the current reference voltage superimposed with the offset is the optimum read voltage, and upon read-error, new first and second positions are obtained based on the direction and the offset for finding the optimum read voltage until reading becomes successful.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.