Fabrication of a semiconductor device
US11776809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Oct 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention relate to a method for fabricating a semiconductor structure comprising a semiconductor material, and a semiconductor substrate fabricated from the method. The method can include a step of providing a template structure. The template structure can comprise an opening, a cavity and a seed structure. The seed structure can comprise a seed material and a seed surface. An inner surface of the template structure can comprise at least one metallic surface area comprising a metallic material. The embodied method further comprises a step of growing the semiconductor structure within the cavity of the template structure from the seed surface along the metallic surface area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.