Plasma apparatus and methods of manufacturing semiconductor device using the same
US11776858B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Feb 24, 2020 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Jun 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes preparing etched mapping data by measuring an etching amount of a wafer subjected to an etching process, determining an error region in which the etching amount of the wafer is outside of a reference value, based on the etched mapping data, compensating distribution of an electrical field applied to the wafer, and compensating exhaust distribution of a process gas, changed by the compensating distribution of an electrical field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.