Device comprising a transistor
US11776995B2 · kind B2 · utility
0Cited by
1References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2022 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | May 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.