Semiconductor device
US11777025B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 9, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Aug 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a semiconductor member, first and second electrodes, a gate electrode, a gate terminal, a first conductive member, a first terminal, and a first insulating member. The semiconductor member includes first and second semiconductor regions, and a third semiconductor region provided between the first and second semiconductor regions. The first electrode is electrically connected to the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The gate terminal is electrically connected to the gate electrode. The first conductive member is electrically insulated from the first and second electrodes, and the gate electrode. The first terminal is electrically connected to the first conductive member. The first insulating member includes a first insulating region between the third semiconductor region and the gate electrode, and a second insulating region between the gate electrode and the first conductive member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.