Patent · US Active

Semiconductor device

US11777028B2 · kind B2 · utility

0Cited by
3References
17Claims
0Family size

Assignees

Inventors

Key dates

Filing dateAug 5, 2021
Grant dateOct 3, 2023
Priority date
Expiry dateFeb 3, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/2527

Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other-end portion. The first conductive member includes a first conductive member end portion and a first conductive member other-end portion. The first conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to fourth semiconductor regions. The first semiconductor region includes first and second partial regions. The third semiconductor region is electrically connected with the second electrode. The fourth semiconductor region is electrically connected with the first electrode. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.