Method of manufacturing optical semiconductor apparatus and the apparatus

US11777278B2 · kind B2 · utility

Assignee

• Oulun yliopisto · FI

Inventors

• Boris Ryvkin · Saint Petersburg, RU
• Eugene A. Avrutin · York, GB
• Juha Kostamovaara · Oulu, FI

Key dates

• Filing date: Jun 28, 2018
• Grant date: Oct 3, 2023
• Expiry date: Oct 4, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/166
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An apparatus is configured to operate in a single fundamental transverse mode and the apparatus includes a waveguide layer between an n-doped cladding layer and a p-doped cladding layer. The waveguide layer includes a first waveguide part, and an active layer located between the first waveguide part and the p-doped cladding layer, the active layer being asymmetrically within the waveguide layer closer to the p-doped cladding layer than the n-doped cladding layer. The refractive index of the n-doped cladding layer being equal to or larger than the p-doped cladding layer. A first end of the first waveguide part is adjacent to the n-doped cladding layer. A second end of the first waveguide part is adjacent to a first end of the active layer. A desired donor density is doped in the first waveguide part for controlling the carrier density dependent internal optical loss in the first waveguide part at high injection levels.