Air-gap type film bulk acoustic resonator
US11777467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Jan 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/173
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An air-gap type film bulk acoustic resonator (FBAR) is provided. The air-gap type FBAR includes a substrate which comprises an air gap portion having a substrate cavity formed in a top surface, a lower electrode formed on the substrate, a piezoelectric layer which is formed on the lower electrode and has one side forming an edge portion in the vicinity of a virtual edge according to vertical projection of the air gap portion, an upper electrode formed on the piezoelectric layer, a first electrode frame which comprises an open ring structure in plane, the open ring structure surrounding a part of a periphery of the piezoelectric layer on the lower electrode, and a second electrode frame positioned on the upper electrode and adjacent to an open portion of the open ring structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.