Capacitor array structure and fabrication method thereof

US11778804B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventor

• Shuai Guo · Beijing, CN

Key dates

• Filing date: Sep 14, 2021
• Grant date: Oct 3, 2023
• Expiry date: Jan 22, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/34

Abstract

Embodiments disclose a capacitor array structure and a method for fabricating a capacitor array structure. The method includes: after forming a first capacitor hole, providing a bonded wafer including a second substrate, a second supporting layer and a second sacrificial layer stacked in sequence, and bonding the bonded wafer to a stacked structure, wherein a surface of the second sacrificial layer away from the second supporting layer is a bonding surface; forming a second capacitor hole, the second capacitor hole penetrating into the bonded wafer at least along a thickness direction to expose the first capacitor hole, such that the first capacitor hole is connected with the second capacitor hole.